4.4 Fabrication of III-V virtual Substrate on 200 mm Silicon for III-V and Si Devices Integration

We present the hetero-epitaxy of III-V materials on 200 mm Silicon wafers by MOCVD. A Ge layer is first grown on the silicon wafer by a two-step process, allowing a lattice matched GaAs layer to be grown on top. Anti-phase boundaries formation are avoided by using a high growth temperature and an arsine partial pressure above 5 mbar during the nucleation of the GaAs layer. The resulting GaAs virtual substrate has a high crystalline quality and a thickness uniformity below 2% over the 200 mm diameter wafer. InGaAs HEMT structure has been subsequently grown using the strain relaxed buffer technique. The measured mobility is 5960 cm 2 /Vs with a 2DEG sheet density of 1×10 12 /cm 2 . This structure is promising for the hetero-integration of III-V devices with Si CMOS.